Etching
YURAY provides comprehensive dry-etching capabilities, including deep silicon etching, metal etching, and dielectric thin-film etching. High-precision, high-selectivity, and highly uniform pattern transfer across diverse material systems and device structures — supporting TGV, TSV, sensors, integrated circuits, and optoelectronic device fabrication.
OVERVIEW
YURAY provides comprehensive dry-etching capabilities covering deep silicon etching (DRIE), inductively coupled plasma (ICP) etching, reactive ion etching (RIE), and metal etching. From high-aspect-ratio TSV trenches and fine-pitch dielectric patterning to precise metal layer definition, our etching platform delivers high-precision, high-selectivity, and highly uniform pattern transfer across silicon, glass, dielectric, and metal thin-film systems. We support TGV, TSV, MEMS sensors, integrated circuits, and optoelectronic device fabrication with process tuning, profile control, and end-to-end metrology.
SERVICES
Our dry-etching platform supports advanced packaging, MEMS, and optoelectronic manufacturing with precise profile control, tight CD uniformity, and high etch selectivity — from deep silicon TSV formation to dielectric patterning and metal interconnect definition.
Deep Silicon Etching (DRIE)
High-aspect-ratio silicon etching using the cyclic Bosch process to create deep, vertical-walled trenches and vias with uniform scallops — ideal for advanced TSV, MEMS, and sensor applications.
| Parameter | Specification |
|---|---|
| Etch Mechanism | Bosch process (passivation / etch cycles) |
| Aspect Ratio | Up to 30:1 |
| Via CD | Down to 3 μm |
| Etch Depth | Up to 300 μm |
| Profile Control | Vertical, tapered, or re-entrant |
| Scallop Uniformity | Consistent across wafer |
| Wafer Size | 6 / 8 / 12 inch |
Inductively Coupled Plasma (ICP) Etching
High-density plasma etching with independent control of ion energy and flux, delivering superior anisotropy, precise profile control, and high etch rates for dielectric and compound semiconductor films.
| Parameter | Specification |
|---|---|
| Etch Mechanism | Inductively coupled plasma (ICP) |
| Material Types | SiNx, SiO₂, poly-Si, SiC |
| Anisotropy | Highly anisotropic profiles |
| Uniformity | < 5% (within wafer) |
| Selectivity to Mask | High (photoresist / hard mask) |
| Profile Control | Tunable sidewall angle |
| Wafer Size | 6 / 8 inch |
Reactive Ion Etching (RIE)
RIE combines chemical reaction and physical ion bombardment to achieve high-precision material removal with excellent pattern fidelity, smooth surfaces, and reproducible results — ideal for dielectric and metal thin-film patterning.
| Parameter | Specification |
|---|---|
| Etch Mechanism | Reactive ion etching (RIE) |
| Material Types | Au, Pt, Al, SiO₂, Si₃N₄ |
| Uniformity | < 4% (within wafer) |
| Etch Rate | Process-dependent |
| Pattern Fidelity | High-fidelity transfer |
| Surface Smoothness | Low-roughness etched surfaces |
| Wafer Size | 6 / 8 inch |
Metal Etching
Specialized metal etching processes utilizing reactive plasma chemistry to precisely pattern conductive thin films with high selectivity, clean sidewalls, and minimal undercut — optimized for interconnect, seed-layer, and electrode patterning.
| Parameter | Specification |
|---|---|
| Etch Mechanism | Plasma-based reactive metal etching |
| Material Types | Al, Ti, Mo, W, Au, Pt |
| Uniformity | < 5% (within wafer) |
| CD Control | Sub-micron precision |
| Sidewall Profile | Clean, controlled sidewalls |
| Selectivity | High to photoresist & dielectrics |
| Wafer Size | 6 / 8 inch |
CASE STUDY
At YURAY, we provide end-to-end full-chain services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven etching results.
Trench Etching Solutions
METROLOGY & QUALITY ASSURANCE
Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs
Quantified SOW Requirements
YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.
Continuous Process Improvement
YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.
SOW-Aligned Characterization Reports
YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.
Third-Party Double Confirmation
YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.
APPLICATIONS
High-density interconnects for advanced chip packaging.
Vertical silicon interconnects for heterogeneous integration.
Glass-based vertical interconnects for advanced packaging.
Precision metal deposition for semiconductor interconnects.
Reliable wafer/glass bonding for 3D integration.
Thin-film deposition for advanced semiconductor manufacturing.
Need a Custom Wafer or Fabrication Process?
Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.