Scanning Electron Microscope (SEM)_Metrology _yuray-tech

Scanning Electron Microscope (SEM)

SEM delivers high-resolution surface imaging, microstructure observation, and dimension measurement for wafers and thin films at micro and nano scale.
Application Scenarios: Microstructure imaging, surface analysis, dimension test.
Classic Standard: ASTM E986 / ISO 22309.
Charging Standard: 1,500 RMB per sample (Note: This bundled price includes both the cross-section slicing preparation and the SEM observation)..

< 2 nm
Resolution
With Dicing
Cross-Section Prep
10× – 1,000,000×
Magnification
4 – 12"
Wafer Size
1,500 RMB/sample
Pricing

OVERVIEW

YURAY provides comprehensive scanning electron microscopy (SEM) services for high-resolution surface imaging and cross-section analysis of semiconductor wafers, packages, and advanced packaging structures. From top-view surface inspection and critical-dimension measurement to cross-section analysis with dicing-based sample preparation, our SEM platform delivers sub-2 nm imaging resolution and excellent depth of field. We support defect inspection, bump and RDL measurement, and structural verification with integrated EDX elemental analysis.

1,500 RMB/sample
Pricing

SERVICES

Our SEM platform enables high-resolution surface and cross-section imaging — supporting defect analysis, critical-dimension measurement, and structural verification across a wide range of materials and device structures.

High-Resolution Surface Imaging

High-resolution top-view SEM imaging for surface morphology, critical-dimension measurement, and defect inspection — enabling precise characterization of patterned features, bumps, RDL lines, and surface anomalies at nanometer scale.

TECHNICAL SPECIFICATIONS
Parameter Specification
Resolution< 2 nm
Magnification10× – 1,000,000×
Acceleration Voltage0.5 – 30 kV
DetectorsSE / BSE / In-lens
MeasurementCD, pitch, feature size
Sample TypesSi, glass, thin films, metals
Wafer Size4 / 6 / 8 / 12 inch

Cross-Section & Failure Analysis

Cross-section SEM analysis with dicing-based sample preparation for layer thickness measurement, interface inspection, and failure analysis — enabling precise structural verification of TSVs, bonding interfaces, and multi-layer stacks.

TECHNICAL SPECIFICATIONS
Parameter Specification
Sample PrepWith dicing / cleaving
Resolution< 2 nm
Layer Measurement≥ 5 nm thickness
Analysis TypesInterface, void, delamination
Elemental AnalysisEDX / EDS
StructuresTSV, bump, bonding interface
OutputImages + measurement data
1,500 RMB/sample
Pricing

CASE STUDY

At YURAY, we provide end-to-end full-chain metrology services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven SEM characterization results.

[end-to-end service]

Bump & Solder Joint Cross-Section Analysis

Key Process
  • SEM imaging at optimized kV
Additional Processing
  • Sample Supply — 8-inch Cu pillar wafer (3 units), incoming inspection and die selection
  • Dicing and precision polishing
  • Cross-section dimensional measurement
  • Analysis — IMC layer and void inspection
  • Analysis — EDX analysis of bump interface
Key Specifications
  • 3 samples received & logged
  • Cross-sections prepared
  • Bump interface clearly resolved
  • Height: 50.2 μm, CD: 25.1 μm
  • IMC thickness: ~1.5 μm measured
  • Cu/Sn composition confirmed
Key Deliverables
  • SEM images, measurements, and EDX data consolidated
  • Final characterization report delivered
[end-to-end service]

TSV & Bonding Interface Inspection

Key Process
  • High-resolution SEM imaging
Additional Processing
  • Sample Supply — 12-inch TSV wafer (Cu-filled), incoming inspection and sample preparation
  • Dicing and precision polishing
  • Cross-section dimensional measurement
  • Analysis — SEM void inspection in Cu fill
  • Analysis — Interface inspection of bonded pair
Key Specifications
  • 12-inch wafer supported
  • TSV cross-sections prepared
  • TSV profile clearly resolved
  • Top: 10.2 μm / Bottom: 8.9 μm
  • Small voids detected & measured
  • Void-free bonding interface confirmed
Key Deliverables
  • SEM images, measurements, and analysis integrated
  • Final characterization report delivered


METROLOGY & QUALITY ASSURANCE

Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs

SOW Requirements

Quantified SOW Requirements

YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.

Process Improvement

Continuous Process Improvement

YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.

Characterization Reports

SOW-Aligned Characterization Reports

YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.

Third-Party Confirmation

Third-Party Double Confirmation

YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.



Need a Custom Wafer or Fabrication Process?

Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.