Computed Tomography (CT)_Metrology _yuray-tech

Computed Tomography (CT)

X-ray CT provides 3D internal scanning, void/crack detection, and microstructure analysis for MEMS and micro devices.
Application Scenarios: 3D scanning, internal defect inspection, structure analysis.
Classic Standard: ASTM E1695 / ISO 15708.
Charging Standard: 2,500 RMB per hour.

≤ 5 μm
3D Resolution
20 – 160 kV
Voltage Range
Max 100 mm
Sample Size
3D Volume
Reconstruction
2,500 RMB/h
Pricing

OVERVIEW

YURAY provides X-ray computed tomography (CT) services for non-destructive 3D internal characterization of semiconductor packages, MEMS devices, solder interconnects, and advanced packaging structures. Our high-resolution CT system captures hundreds of projection images at multiple angles and reconstructs detailed 3D volumetric data — enabling precise defect localization, dimensional measurement, and internal structural analysis in all three axes without sample destruction. We support failure analysis, process development, and quality verification for complex 3D integrated devices.

2,500 RMB/h
Pricing

SERVICES

Our CT inspection platform enables comprehensive 3D internal analysis — from micron-level defect detection to full-volume dimensional metrology — supporting failure analysis, process optimization, and reliability assessment.

Package 3D Defect Analysis

Three-dimensional CT imaging for comprehensive internal defect detection in semiconductor packages — including voids, cracks, delamination, and solder joint defects — with precise 3D localization and volumetric quantification.

TECHNICAL SPECIFICATIONS
Parameter Specification
3D Resolution≤ 5 μm (voxel size)
Void Detection≥ 5 μm void size
Defect TypesVoids, cracks, delamination
Package TypesBGA, QFN, SiP, SoC, PoP
Voltage Range20 – 160 kV
Sample SizeUp to 100 mm
Analysis Output3D volume render + cross-sections

3D Interconnect Metrology

CT-based dimensional metrology for 3D interconnect structures including TSVs, copper pillars, micro-bumps, and RDL — enabling non-destructive measurement of critical dimensions in all three spatial axes.

TECHNICAL SPECIFICATIONS
Parameter Specification
CD Measurement≥ 10 μm feature size
Structure TypesTSV, Cu pillar, micro-bump, RDL
Dimensional Accuracy± 2 μm (typical)
Measurement PlanesXY, XZ, YZ + arbitrary
Voltage Range30 – 130 kV
Sample SizeUp to 50 mm (high-res)
Output3D model + dimensional data
2,500 RMB/h
Pricing

CASE STUDY

At YURAY, we provide end-to-end full-chain metrology services. Below is a detailed look at how we translate stringent customer Statement of Work (SOW) requirements into delivered, proven CT inspection results.

[end-to-end service]

SiP Package Internal Defect CT Analysis

Key Process
  • 360° rotation CT with optimized kV
Additional Processing
  • Sample Supply — SiP package samples (3 units), incoming inspection and sample registration
  • High-resolution reconstruction at 5 μm voxel
  • Analysis — 3D defect localization and measurement
  • Analysis — Arbitrary plane slicing and measurement
  • Metrology — Volume rendering and defect annotation
Key Specifications
  • 3 samples received & logged
  • Full-volume 3D data acquired
  • Voids ≥ 8 μm detected
  • 3D defect coordinates + volume data
  • Multi-plane cross-sections delivered
  • 3D renderings and images included
Key Deliverables
  • 3D data, images, and analysis consolidated
  • Final CT analysis report delivered
[end-to-end service]

TSV 3D Dimensional CT Metrology

Key Process
  • Sub-micron voxel CT scanning
Additional Processing
  • Sample Supply — TSV die sample (Cu-filled, 20×100 μm), incoming inspection and sample mounting
  • XY cross-section measurement at multiple Z
  • XZ / YZ cross-section analysis
  • Analysis — Volumetric defect analysis in Cu fill
  • Analysis — Multi-TSV measurement and statistics
Key Specifications
  • Die sample supported
  • 3D volume data at 2 μm voxel
  • Top: 20.5 μm / Bottom: 18.2 μm
  • Depth: 98.5 μm, Taper: ~1.3°
  • 3 small voids detected (3–5 μm)
  • 10 TSVs measured, stats reported
Key Deliverables
  • CT images, dimensional data, and analysis integrated
  • Final CT metrology report delivered


METROLOGY & QUALITY ASSURANCE

Reliable Deposition Quality, Complimentary Characterization Included At YURAY, deposition service means more than simply depositing a film. We combine qualified equipment, controlled processes, experienced engineering support, and rigorous quality management to deliver stable, repeatable thin-film performance. Every project can be supported with a free comprehensive characterization report, providing customers with transparent and actionable quality data. Depending on the service requirements, reports may include film thickness, uniformity, surface condition, adhesion, composition, and other relevant characterization results. Choose YURAY for high-quality film deposition, responsive technical support, and verified results—without additional reporting costs

SOW Requirements

Quantified SOW Requirements

YURAY converts SOW requirements into measurable criteria, defining clear quality targets and inspection standards.

Process Improvement

Continuous Process Improvement

YURAY identifies root causes of issues, such as interface peeling, and implements effective corrective solutions.

Characterization Reports

SOW-Aligned Characterization Reports

YURAY delivers characterization reports with indicators directly aligned to SOW requirements for transparent verification.

Third-Party Confirmation

Third-Party Double Confirmation

YURAY uses independent third-party laboratories to double-confirm critical indicators through characterization and inspection.



Need a Custom Wafer or Fabrication Process?

Share your drawings, wafer specifications, or project requirements — our engineering team will prepare a technical proposal and quote within one business day.